linear integrated systems ? 4042 clipper court ? f remont, ca 94538 ? tel: 510 490 - 9160 ? fax: 510 353 - 0261 doc 20119 05 / 14 /2014 rev# a 6 ecn# j sst 111 features direct replacement for siliconix j/sst111 series low gate leakage current 5pa fast switching 4ns absolute maximum ratings 1 @ 25 c (unless otherwise stated) maximum temperatures storage temperature - 55 to 150c junction operating temp erature - 55 to 150c maximum power dissipation continuous power dissipation (j) 3 360mw continuous power dissipation (sst) 3 350mw maximum currents gate current 50ma maximum voltages gate to drain - 35v gate to source - 35v st atic electrical characteristics @25 c (unless otherwise stated) sym. characteristic typ j/sst111 j/sst112 j/sst113 unit conditions min max min max min max bv gss gate to source breakdown voltage - 35 - 35 - 35 v i g = - 1a, v ds = 0v v gs(off) gate to source cutoff voltage - 3 - 10 - 1 - 5 - 3 v ds = 5v, i d = 1a v gs(f) gate to source forward voltage 0.7 i g = 1ma, v ds = 0v i dss drain to source saturation current 2 20 5 2 ma v ds = 15v, v gs = 0v i gss gate leakage current - 0.005 - 1 - 1 - 1 na v gs = - 15v, v ds = 0v i g gate operating current - 5 pa v dg = 15v, i d = 1.0ma i d(off) drain cutoff current 0.005 1 1 1 na v ds = 5v, v gs = - 10v r ds(on) drain to source on resistance 30 50 100 v gs = 0v, v ds = 0.1v j/sst111 series single n - channel jfet switch sst series sot - 23 top view j series to - 92 top view 1 2 3 sot-23 top view d g s
linear integrated systems ? 4042 clipper court ? f remont, ca 94538 ? tel: 510 490 - 9160 ? fax: 510 353 - 0261 doc 20119 05 / 14 /2014 rev# a 6 ecn# j sst 111 dyn amic electrical characteristics @25 c (unless otherwise stated) sym. characteristic typ j/sst111 j/sst112 j/sst113 unit conditions min max min max min max g fs forward transconductance 6 ms v ds = 20v, i d = 1ma f = 1khz g os output conductance 25 s r ds(on) drain to source on resistance 30 50 100 v gs = 0v, i d = 1 ma f = 1khz c iss input capacitance 7 12 12 12 pf v ds = 0v, v gs = - 10v f = 1mhz c rss reverse transfer capacitance 3 5 5 5 e n equivalent noise voltage 3 nv/hz v dg = 10v, i d = 1ma f = 1 khz switching circuit char acteristics sym. j/sst111 j/sst112 j/sst113 v gs(l) - 12v - 7v - 5v r l 800 1600 3200 i d(on) 12ma 6ma 3ma switching characteristics sym. characteristic typ unit conditions t d(on) turn on time 2 ns v dd = 10v v gs(h) = 0v t r 2 t d(off) turn off time 6 t f 15 notes 1. absolute ma ximum ratings are limiting values above which serviceability may be impaired. 2. pulse test: pw 300s, duty cycle 3% 3. de r ate 2 . 8 m w/c above 25c information furnished by linear integrated systems is believed to be accurate and reliable. however, no responsibility is ass umed for its use; nor for any infringement of patents or other r ights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. switching test circuit linear integrated systems (lis) is a 25 - y ear - old, third - generation precision semiconductor company providing high - quality discrete components. expertise brought to lis is based on processes and products developed at amelco, union carbide, intersil and micro power systems by c ompany president john h. hall. hall, a protg of silicon valley legend dr. jean hoerni, was the director of ic development at union carbide, co - founder and vice president of r&d at intersil, and founder/president of micro power systems. sot - 23 to - 92 51 ? r l 1k ? 51 ? v dd v gs(h) v gs(l) out 1 2 3 sot-23 dimensions in millimeters 0.89 1.03 1.78 2.05 1.20 1.40 2.10 2.64 0.37 0.51 2.80 3.04 0.89 1.12 0.013 0.100 0.085 0.180 0.55
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